Silicon Irradiance Sensor M&T 0-10V

Silicon Irradiance Sensor M&T 0-10V

Order number

S68120 / S68261

Availability

On request

Documents

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  • Build as solar module - easily comparable to energy yield and system performance of PV systems
  • Optional cell temperature as alternative to directly measured module temperature
  • Output signal:  0 ... 10 V for irradiance and cell temperature

Silicon irradiance sensors show a cost-effective, but rugged and reliable solution for irradiance measurement. Based on the construction of the sensor element corresponding to a PV module they are ideal as reference for monitoring of PV systems. Especially the spectral response comparable to PV modules as well as the similar inclination error (incident angle modifier) allow an exact analysis of PV energy yields using Si sensor data.

Sensor Si-V-10TC Si-V-10-TC-T
Ordner No. S68120 S68261
Solar cell Monocrystalline silicon (50 x 33 mm)
Measurement uncertainty
Irradiance

± 5 W/m² ±2.5% of reading
valid for temperature compensation, spectrum AM 1.5 and vertical light beam
Measurement uncertainty
Internal temp. measurement
  1.0 K @ -35 ... 70 °C
1.1 K @ -35 ... 80 °C
Response time (99%) 0.15 s
Offset 2 W/m²
Non-Linearity 0.10 %
Temperature dependance 0.40 % @ -35 ... 80 °C
Power supply 24 VDC (12 ... 28 VDC)
typ. < 1 mA power consumption
24 VDC (12 ... 28 VDC)
typ. < 2 mA power consumption
Load impedance min. 100 kΩ
Output signal irradiance 0 ... 10 V @ 0 ... 1500 W/m²
Output signal cell temperature   0 ... 10 V @ -40 ... 90 °C
Sensor connection

LiYC11Y 4 x 0.14 mm² UL20233; length typical 3 m,
UV- and temperature resistant

Operating temperature -35 … +80 °C
Housing material Powder-coated aluminium, IP 65
Dimensions / Weight 155 x 85 x 39 mm  /  approx. 350 g
Manufacturer Ingenieurbüro Mencke & Tegtmeyer GmbH